標題: High quality vertical light emitting diodes fabrication by mechanical lift-off technique
作者: Tu, Po-Min
Hsu, Shih-Chieh
Chang, Chun-Yen
光電工程學系
Department of Photonics
公開日期: 2011
摘要: We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2x10(9) to 1x10(8) cm(-2). Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.
URI: http://hdl.handle.net/11536/14591
http://dx.doi.org/10.1117/12.893237
ISBN: 978-0-81948-733-9
ISSN: 0277-786X
DOI: 10.1117/12.893237
期刊: ELEVENTH INTERNATIONAL CONFERENCE ON SOLID STATE LIGHTING
Volume: 8123
顯示於類別:會議論文


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