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dc.contributor.authorKuo, Shiou-Yien_US
dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2018-08-21T05:54:25Z-
dc.date.available2018-08-21T05:54:25Z-
dc.date.issued2015-12-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2015.2502901en_US
dc.identifier.urihttp://hdl.handle.net/11536/145916-
dc.description.abstractThe emission efficiency of GaN-based light-emitting diodes (LEDs) decreases significantly as the emission wavelength is shorter than 370 nm because of the absorption of emission light in the GaN layers. The vertical LED structure could be applied to avoid the absorption problem, because the undoped GaN layer would be removed and the n-GaN layer could be thinned as much as possible in the fabrication process. In this report, we propose a novel ultraviolet (UV) LED structure with a thin indium-tinoxide (ITO) layer as the ohmic contact and a dielectric distributed Bragg reflector (DBR) as the high reflectivity mirror. Comparing referenced vertical UV LED structures with ITO/Ag as the metal mirror, the vertical UV LED with the ITO/DBR mirror shows the output power of approximately 190 mW at 350 mA with 7.9% enhancement.en_US
dc.language.isoen_USen_US
dc.subjectVertical LEDen_US
dc.subjectUVAen_US
dc.subjectDBRen_US
dc.titleEnhanced Light Output of UVA GaN Vertical LEDs With Novel DBR Mirrorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2015.2502901en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume51en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000212735100001en_US
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