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dc.contributor.authorGogoi, Pranjal Kumaren_US
dc.contributor.authorHu, Zhenliangen_US
dc.contributor.authorWang, Qixingen_US
dc.contributor.authorCarvalho, Alexandraen_US
dc.contributor.authorSchmidt, Danielen_US
dc.contributor.authorYin, Xinmaoen_US
dc.contributor.authorChang, Yung-Huangen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorSow, Chorng Hauren_US
dc.contributor.authorNeto, A. H. Castroen_US
dc.contributor.authorBreese, Mark B. H.en_US
dc.contributor.authorRusydi, Andrivoen_US
dc.contributor.authorWee, Andrew T. S.en_US
dc.date.accessioned2019-04-03T06:44:05Z-
dc.date.available2019-04-03T06:44:05Z-
dc.date.issued2017-08-16en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.119.077402en_US
dc.identifier.urihttp://hdl.handle.net/11536/145924-
dc.description.abstractUsing wide spectral range in situ spectroscopic ellipsometry with systematic ultrahigh vacuum annealing and in situ exposure to oxygen, we report the complex dielectric function of MoS2 isolating the environmental effects and revealing the crucial role of unpassivated and passivated sulphur vacancies. The spectral weights of the A (1.92 eV) and B (2.02 eV) exciton peaks in the dielectric function reduce significantly upon annealing, accompanied by spectral weight transfer in a broad energy range. Interestingly, the original spectral weights are recovered upon controlled oxygen exposure. This tunability of the excitonic effects is likely due to passivation and reemergence of the gap states in the band structure during oxygen adsorption and desorption, respectively, as indicated by ab initio density functional theory calculation results. This Letter unravels and emphasizes the important role of adsorbed oxygen in the optical spectra and many-body interactions of MoS2.en_US
dc.language.isoen_USen_US
dc.titleOxygen Passivation Mediated Tunability of Trion and Excitons in MoS2en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevLett.119.077402en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.citation.volume119en_US
dc.citation.issue7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000407719400012en_US
dc.citation.woscount5en_US
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