標題: Integrating Poly-Silicon and InGaZnO Thin-Film Transistors for CMOS Inverters
作者: Chen, ChangDong
Yang, Bo-Ru
Liu, Chuan
Zhou, Xing-Yu
Hsu, Yuan-Jun
Wu, Yuan-Chun
lm, Jang-Soon
Lu, Po-Yen
Wong, Man
Kwok, Hoi-Sing
Shieh, Han-Ping D.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: InGaZnO;hydrogenation;inverter;LTPS;thin-film transistors (TFTs)
公開日期: 1-九月-2017
摘要: The applications of a-InGaZnO thin-film transistors (TFTs) to logic circuits have been limited owing to the intrinsic n-channel operation. In this paper, we demonstrated a hybrid inverter constructed by p-channel low-temperature poly-silicon (LTPS) TFTs and n-channel amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs. Hydrogenated LTPS TFTs and a-IGZO TFTs have been successfully fabricated on the same panel, followed by a rapid thermal annealing treatment to remove the hydrogens in the a-IGZO TFTs. The resulted hybrid inverter exhibits large noise margin closed to V-DD/2 and a high voltage gain as 68.3. Due to the complementary configurations in the static state, the inverter shows small current and thus consumes low power in hundreds of picowatts. As all the fabrication processes are compatible with conventional techniques, the reported results may open new opportunities in circuit design and applications for oxide TFTs.
URI: http://dx.doi.org/10.1109/TED.2017.2731205
http://hdl.handle.net/11536/145949
ISSN: 0018-9383
DOI: 10.1109/TED.2017.2731205
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 64
起始頁: 3668
結束頁: 3671
顯示於類別:期刊論文