標題: Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film
作者: Chiu, Shao-Pin
Yamanouchi, Michihiko
Oyamada, Tatsuro
Ohta, Hiromichi
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 28-八月-2017
摘要: Epitaxial La2/3Sr1/3MnO3 (LSMO) films have been grown on SrTiO3 (001) substrates via pulsed laser deposition. In a 22-nm-thick LSMO film with a low residual resistivity of rho(0) approximate to 59 mu Omega cm, we found a zero-field dip in the magnetoresistance (MR) below 10 K, manifesting the weak antilocalization (WAL) effect due to strong spin-orbit coupling (SOC). We have analyzed the MR data by including the D'yakonov-Perel' spin-relaxation mechanism in the WAL theory. We explain that the delocalized spin-down electron sub-band states play a crucial role for facilitating marked SOC in clean LSMO. Moreover, we find that the SOC strength and gate voltage tunability are similar to those in a two-dimensional electron gas at the LaAlO3/SrTiO3 interface, indicating the presence of an internal electric field near the LSMO/SrTiO3 interface. In a control measurement on a 5-nm-thick high resistivity (rho(0) approximate to 280 mu Omega cm) LSMO film, we observe only a small zero-field peak in MR from weak localization effect, indicating negligible SOC.
URI: http://dx.doi.org/10.1103/PhysRevB.96.085143
http://hdl.handle.net/11536/145978
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.96.085143
期刊: PHYSICAL REVIEW B
Volume: 96
Issue: 8
起始頁: 0
結束頁: 0
顯示於類別:期刊論文


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