標題: | Exploration and characterization of the memcapacitor and memristor properties of Ni-DNA nanowire devices |
作者: | Chu, Hsueh-Liang Lai, Jian-Jhong Wu, Li-Ying Chang, Shen-Lin Liu, Chia-Ming Jian, Wen-Bin Chen, Yu-Chang Yuan, Chiun-Jye Wu, Tai-Sing Soo, Yun-Liang Di Ventra, Massimiliano Chang, Chia-Ching 生物科技學系 電機學院 Department of Biological Science and Technology College of Electrical and Computer Engineering |
公開日期: | 1-九月-2017 |
摘要: | A 2-mu m-long Ni ion-chelated DNA molecule (Ni-DNA) was found for the first time to possess both memcapacitor and memristor properties; this Ni-DNA molecule is known as a dual memory circuit element (memelement). As a memelement, the state of impedance on Ni-DNA is proportional to the unit number of Ni ions containing a base pair complex (Ni-bp), which is determined by the previously applied external voltage. Interestingly, the impedances of Ni-DNA change in response to a change in the sweeping frequencies of the external bias. Our simulation results also indicate that changes in the effective resistance and capacitance of Ni-bp may be attributed to changes in the Ni ion redox species in the Ni-bp of a Ni-DNA nanowire. Therefore, the working mechanism of a nanowire-type memcapacitor and memristor is revealed. In summary, the Ni-DNA nanowire is shown to be a multi-dimensional memory device, whose memory state depends on the length of DNA and applied external voltages/frequencies. |
URI: | http://dx.doi.org/10.1038/am.2017.157 http://hdl.handle.net/11536/145997 |
ISSN: | 1884-4049 |
DOI: | 10.1038/am.2017.157 |
期刊: | NPG ASIA MATERIALS |
Volume: | 9 |
顯示於類別: | 期刊論文 |