Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy

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DC 欄位	值	語言
dc.contributor.author	Chen, WK	en_US
dc.contributor.author	Pan, YC	en_US
dc.contributor.author	Lin, HC	en_US
dc.contributor.author	Ou, J	en_US
dc.contributor.author	Chen, WH	en_US
dc.contributor.author	Lee, MC	en_US
dc.date.accessioned	2014-12-08T15:01:15Z	-
dc.date.available	2014-12-08T15:01:15Z	-
dc.date.issued	1997-12-15	en_US
dc.identifier.issn		en_US
dc.identifier.uri	http://hdl.handle.net/11536/145	-
dc.description.abstract	We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.	en_US
dc.language.iso	en_US	en_US
dc.subject	InN	en_US
dc.subject	MOVPE	en_US
dc.title	Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	36	en_US
dc.citation.issue	12B	en_US
dc.citation.spage	L1625	en_US
dc.citation.epage	L1627	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
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