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dc.contributor.authorChi, Yu-Chiehen_US
dc.contributor.authorHuang, Yu-Fangen_US
dc.contributor.authorWu, Tsai-Chenen_US
dc.contributor.authorTsai, Cheng-Tingen_US
dc.contributor.authorChen, Li-Yinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Gong-Ruen_US
dc.date.accessioned2019-04-03T06:43:47Z-
dc.date.available2019-04-03T06:43:47Z-
dc.date.issued2017-09-05en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-017-11186-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/146030-
dc.description.abstractViolet laser diode (VLD) based white-light source with high color rendering index (CRI) for lighting communication is implemented by covering with Y3Al5O12:Ce3+ (YAG:Ce) or Lu3Al5O12:Ce3+/CaAlSiN3: Eu2+ (LuAG: Ce/CASN: Eu) phosphorous diffuser plates. After passing the beam of VLD biased at 70 mA (similar to 2I(th)) through the YAG: Ce phosphorous diffuser, a daylight with a correlated color temperature (CCT) of 5068 K and a CRI of 65 is acquired to provide a forward error correction (FEC) certified data rate of 4.4 Gbit/s. By using the VLD biased at 122 mA (similar to 3.5I(th)) to excite the LuAG: Ce/CASN: Eu phosphorous diffuser with 0.85-mm thickness, a warm white-light source with a CCT of 2700 K and a CRI of 87.9 is obtained at a cost of decreasing transmission capacity to 2.4 Gbit/s. Thinning the phosphor thickness to 0.75 mm effectively reduces the required bias current by 32 mA to achieve the same CCT for the delivered white light, which offers an enlarged CRI of 89.1 and an increased data rate of 4.4 Gbit/s. Further enlarging the bias current to 105 mA remains the white-light transmission capacity at 4.4 Gbit/s but reveals an increased CCT of 3023 K and an upgraded CRI of 91.5.en_US
dc.language.isoen_USen_US
dc.titleViolet Laser Diode Enables Lighting Communicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-017-11186-0en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000409309300057en_US
dc.citation.woscount10en_US
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