標題: | Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory |
作者: | Wu, Cheng-Hsien Pan, Chih-Hung Chen, Po-Hsun Chang, Ting-Chang Tsai, Tsung-Ming Chang, Kuan-Chang Shih, Chih-Cheng Chi, Ting-Yang Chu, Tian-Jian Wu, Jia-Ji Du, Xiaoqin Zheng, Hao-Xuan Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-九月-2017 |
摘要: | In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current-voltage (I-V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon. (C) 2017 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.10.094102 http://hdl.handle.net/11536/146041 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.10.094102 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 10 |
顯示於類別: | 期刊論文 |