標題: Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
作者: Wu, Cheng-Hsien
Pan, Chih-Hung
Chen, Po-Hsun
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Shih, Chih-Cheng
Chi, Ting-Yang
Chu, Tian-Jian
Wu, Jia-Ji
Du, Xiaoqin
Zheng, Hao-Xuan
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-2017
摘要: In this study, we demonstrate a forming technique that enables us to control whether the switching layer of a Pt/In2O3/TiN device is near the Pt electrode or the TiN electrode. This means that In2O3-based resistive random access memory (RRAM) can be switched at either the active or inert electrode. The resistive switching current-voltage (I-V) curves for both electrodes exhibit stable memory windows. Through material and electrical analyses, we found that the reason for switching at the inert electrode is the oxygen-vacancy-rich characteristic of In2O3. Finally, a physical model is proposed to explain this phenomenon. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.10.094102
http://hdl.handle.net/11536/146041
ISSN: 1882-0778
DOI: 10.7567/APEX.10.094102
期刊: APPLIED PHYSICS EXPRESS
Volume: 10
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