完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Che-Yu | en_US |
dc.contributor.author | Chen, Tzu-Pei | en_US |
dc.contributor.author | Huang, Jhih-Kai | en_US |
dc.contributor.author | Lin, Tzu-Neng | en_US |
dc.contributor.author | Huang, Chia-Yen | en_US |
dc.contributor.author | Li, Xiu-Ling | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Shen, Ji-Lin | en_US |
dc.contributor.author | Chang, Chun-Yen | en_US |
dc.date.accessioned | 2018-08-21T05:54:34Z | - |
dc.date.available | 2018-08-21T05:54:34Z | - |
dc.date.issued | 2017-09-01 | en_US |
dc.identifier.issn | 1077-260X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JSTQE.2017.2749973 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146128 | - |
dc.description.abstract | Color-conversion efficiency enhancement of hybrid light-emitting diodes (LEDs) by cadmium-free colloidal quantum dots (QDs) and a novel selective area nanocavities structure has been demonstrated. Combining nanoimprinting and photolithography techniques, nanocavities array can be fabricated at designated locations on the LEDs. The color-conversion efficiency of selective area nanocavities LED can be enhanced by up to 13%. The significant color-conversion efficiency enhancement is attributed to resonance of InP QDs emission in nanocavities and nonradiative energy transfer from LED active layers to InPQDs, which has been investigated and characterized by finite domain time-domain simulation, electroluminescence, and time-resolved photoluminescence measurements. This hybrid nanostructured device, therefore, exhibits a great potential for the applications of multicolor lighting sources and micro-LED. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Light emitting diodes | en_US |
dc.subject | optoelectronic devices | en_US |
dc.subject | nanotechnology | en_US |
dc.subject | energy transfer | en_US |
dc.subject | colloidal quantum dots | en_US |
dc.title | Enhanced Color-Conversion Efficiency of Hybrid Nanostructured-Cavities InGaN/GaN Light-Emitting Diodes Consisting of Nontoxic InP Quantum Dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JSTQE.2017.2749973 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | en_US |
dc.citation.volume | 23 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000411620800001 | en_US |
顯示於類別: | 期刊論文 |