Title: 2-V operated flexible vertical organic transistor with good air stability and bias stress reliability
Authors: Huang, Kuan-Min
Lin, Hung-Cheng
Kawashima, Kazuaki
Osaka, Itaru
Zan, Hsiao-Wen
Meng, Hsin-Fei
Takimiya, Kazuo
物理研究所
資訊工程學系
光電工程學系
Institute of Physics
Department of Computer Science
Department of Photonics
Keywords: Flexible;Vertical organic transistor;Air stability;Low voltage operating
Issue Date: 1-Nov-2017
Abstract: In this work, we demonstrated a vertical organic transistor using air-stable material to exhibit good lifetime, good bias-stress reliability, and low operation voltage on a flexible plastic substrate in air ambient. With a synthesized NTz-based semiconducting polymer, the proposed space-charge-limited transistor (SCLT) delivers high on-off current ratio of 160000 and high output current density of 10 mA/cm(2) at about 2 V. Without encapsulation, the proposed transistor keeps stable current-voltage relationship for 180 days and has only 0.1 V threshold voltage shift after 5000 s bias stress. No significant degradation can be observed after 1000-times bending and a maximum gain of 14 can be obtained when connecting the flexible transistor with a resistor to form an inverter. (C) 2017 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2017.08.007
http://hdl.handle.net/11536/146132
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2017.08.007
Journal: ORGANIC ELECTRONICS
Volume: 50
Begin Page: 325
End Page: 330
Appears in Collections:Articles