High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation

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DC Field	Value	Language
dc.contributor.author	Lai, Fang-, I	en_US
dc.contributor.author	Lin, S. G.	en_US
dc.contributor.author	Hsieh, C. E.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.date.accessioned	2018-08-21T05:56:25Z	-
dc.date.available	2018-08-21T05:56:25Z	-
dc.date.issued	2008-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146172	-
dc.description.abstract	InGaN micro-hole-array LEDs (mu-LEDs) with and without oxide-film on it were fabricated. Compared with conventional LED, output power of mu-LEDs without and with oxide film have enhancement of 38% and 82% at 20 mA, respectively. (C)2008 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	High Enhancement in Light Output of InGaN-based Micro-hole Array LEDs by Photoelectrochemical (PEC) Oxidation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9	en_US
dc.citation.spage	2255	en_US
dc.contributor.department	交大-IBM智慧物聯網與巨量資料分析研發中心	zh_TW
dc.identifier.wosnumber	WOS:000260498401118	en_US
Appears in Collections:	Conferences Paper