標題: Define high quality Type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution x-ray diffraction
作者: Cheng, Hui-Wen
Lin, Chien-Hung
Lee, Chien-Ping
電機學院
電子工程學系及電子研究所
奈米科技中心
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
Center for Nanoscience and Technology
關鍵字: type-I QW;InGaAsSb/AlGaAsSb;HRXRD;lattice-matched
公開日期: 1-Jan-2018
摘要: Active InGaAsSb/AlGaAsSb type-I quantum well (QW) compositions acceptable for pseudomorphic growth on GaSb substrates restrict the optical range to below 4 mu m. Increasing the In concentration in active region and growing lattice-matched barrier/cladding layers will reach higher emission wavelength. We need to overcome several issues during fabrication process to ensure this high quality epitaxial layer. In this paper, high-resolution x-ray diffraction (HRXRD) method is used to define optimal epitaxy parameters for stable type-I GaSb-based mid infrared laser structures.
URI: http://hdl.handle.net/11536/146236
期刊: PROCEEDINGS OF 4TH IEEE INTERNATIONAL CONFERENCE ON APPLIED SYSTEM INNOVATION 2018 ( IEEE ICASI 2018 )
起始頁: 1354
結束頁: 1357
Appears in Collections:Conferences Paper