Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

doi:10.1088/1742-6596/864/1/012007

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Zhuravlev, K. S.	en_US
dc.contributor.author	Gulyaev, D. V.	en_US
dc.contributor.author	Aleksandrov, I. A.	en_US
dc.contributor.author	Malin, T. V.	en_US
dc.contributor.author	Mansurov, V. G.	en_US
dc.contributor.author	Galitsyn, Yu G.	en_US
dc.contributor.author	Konfederatova, K. A.	en_US
dc.contributor.author	Chen, Yen-Chun	en_US
dc.contributor.author	Chang, Wen-Hao	en_US
dc.date.accessioned	2019-04-03T06:48:01Z	-
dc.date.available	2019-04-03T06:48:01Z	-
dc.date.issued	2017-01-01	en_US
dc.identifier.issn	1742-6588	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/1742-6596/864/1/012007	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146240	-
dc.description.abstract	We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10(7)-10(9) cm(-2). Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.	en_US
dc.language.iso	en_US	en_US
dc.title	Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1088/1742-6596/864/1/012007	en_US
dc.identifier.journal	33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS	en_US
dc.citation.volume	864	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000437783500007	en_US
dc.citation.woscount	1	en_US
顯示於類別：	會議論文

文件中的檔案：

e5a1277389df5aa650a25d6dd5bc2c7b.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。