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dc.contributor.authorRuan, Dun-Baoen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChiu, Yu-Chuanen_US
dc.contributor.authorYu, Min-Chinen_US
dc.contributor.authorGan, Kai-jhihen_US
dc.contributor.authorChien, Ta-Chunen_US
dc.contributor.authorKuo, Po-Yien_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2018-08-21T05:56:29Z-
dc.date.available2018-08-21T05:56:29Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2378-8593en_US
dc.identifier.urihttp://hdl.handle.net/11536/146243-
dc.description.abstractA novel high mobility channel material, amorphous tungsten doped indium-oxide, is used as the active layer of flexible TFT, which is fabricated on a transparent polyimide under a low temperature process. The effects of channel thickness are investigated as well in this work. The flexible TFT with a suitable thickness of IWO film shows a high carrier mobility and low sub-threshold swing. The improvement can be attributed to increased donor-like oxygen vacancy with the thickness of channel layer increased.en_US
dc.language.isoen_USen_US
dc.subjectIWOen_US
dc.subjectTFTen_US
dc.subjectPolyimideen_US
dc.titleHigh Mobility Tungsten-Doped Thin-Film Transistor on Polyimide Substrate with Low Temperature Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)en_US
dc.citation.spage367en_US
dc.citation.epage368en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000438498600108en_US
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