Gap-Type a-Si TFTs for Front Light Sensing Application

doi:10.1109/JDT.2011.2164054

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Tai, Ya-Hsiang	en_US
dc.contributor.author	Chou, Lu-Sheng	en_US
dc.contributor.author	Chiu, Hao-Lin	en_US
dc.date.accessioned	2014-12-08T15:20:32Z	-
dc.date.available	2014-12-08T15:20:32Z	-
dc.date.issued	2011-12-01	en_US
dc.identifier.issn	1551-319X	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JDT.2011.2164054	en_US
dc.identifier.uri	http://hdl.handle.net/11536/14624	-
dc.description.abstract	The photo effect of gap-gate type hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) has been studied to be employed as light sensors owing to its outstanding photosensitivity. It can be operated in on region to provide a higher current level as the sensing signal. However, the gap-gate a-Si:H TFT suffers from some problems such as the photo-current degradation resulted from illuminations and the disturbance of the backlight source when it is used as the sensor in display panel. A new method is proposed to overcome the above issues, which gives a feasible way for this kind of TFT to be used in TFT LCD panel. In this paper, the operation of the sensing method is fully described.	en_US
dc.language.iso	en_US	en_US
dc.subject	Amorphous gap-gate thin-film transistor (TFT)	en_US
dc.subject	light sensor	en_US
dc.title	Gap-Type a-Si TFTs for Front Light Sensing Application	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/JDT.2011.2164054	en_US
dc.identifier.journal	JOURNAL OF DISPLAY TECHNOLOGY	en_US
dc.citation.volume	7	en_US
dc.citation.issue	12	en_US
dc.citation.spage	679	en_US
dc.citation.epage	683	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000296748200001	-
dc.citation.woscount	3	-
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