Making a direct electrical contact to InGaN/GaN nanorod LEDs: high output power density

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Ya-Ju	en_US
dc.contributor.author	Lin, Shawn-Yu	en_US
dc.contributor.author	Chiu, Ching-Hua	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2018-08-21T05:56:29Z	-
dc.date.available	2018-08-21T05:56:29Z	-
dc.date.issued	2009-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146261	-
dc.description.abstract	We realize a new scheme for making a direct contact to a two-dimensional (2D) nanorod LED array using the oblique-angle deposition. More importantly, we demonstrate highly efficient carrier injection into the nanorods. (C) 2006 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Making a direct electrical contact to InGaN/GaN nanorod LEDs: high output power density	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5	en_US
dc.citation.spage	441	en_US
dc.contributor.department	交大-IBM智慧物聯網與巨量資料分析研發中心	zh_TW
dc.identifier.wosnumber	WOS:000274751300222	en_US
顯示於類別：	會議論文