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dc.contributor.authorLin, Bo-Wenen_US
dc.contributor.authorChang, Chung-Chengen_US
dc.contributor.authorHsieh, Cheng-Yuen_US
dc.contributor.authorWang, Bau-Mingen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.authorHsu, Wen-Chingen_US
dc.date.accessioned2014-12-08T15:20:32Z-
dc.date.available2014-12-08T15:20:32Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2011.2167677en_US
dc.identifier.urihttp://hdl.handle.net/11536/14627-
dc.description.abstractPeriodic tent-like post patterns on a-plane sapphire substrates were fabricated using a two-step etching process. They were denoted as a-plane dot pattern sapphire substrate (ADPSS). Compared with the GaN-based light-emitting diode (LED) grown on a-plane sapphire without any pattern (AFlat), the ADPSS-LED has higher output power, light extraction efficiency (LEE), and external quantum efficiency (EQE), and better crystal quality. The output power of ADPSS-LED was 9.6 mW, which was 68.4% larger than the AFlat-LED. In addition, the blue shift of ADPSS-LED was found to be less than that of AFlat-LED.en_US
dc.language.isoen_USen_US
dc.subjectA-planeen_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectsapphireen_US
dc.titleEnhanced Performance of LEDs Using Periodic Tent-Like Post Patterns on A-plane Sapphire Substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2011.2167677en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume23en_US
dc.citation.issue23en_US
dc.citation.spage1772en_US
dc.citation.epage1774en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000296730200002-
dc.citation.woscount2-
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