Oxygen sensors made by monolayer graphene

doi:10.1117/12.907768

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hung, S. C.	en_US
dc.contributor.author	Chen, C. W.	en_US
dc.contributor.author	Yang, M. D.	en_US
dc.contributor.author	Yeh, C. W.	en_US
dc.contributor.author	Wu, C. H.	en_US
dc.contributor.author	Chi, G. C.	en_US
dc.contributor.author	Ren, F.	en_US
dc.contributor.author	Pearton, S. J.	en_US
dc.date.accessioned	2019-04-03T06:47:56Z	-
dc.date.available	2019-04-03T06:47:56Z	-
dc.date.issued	2012-01-01	en_US
dc.identifier.isbn	978-0-81948-911-1	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://dx.doi.org/10.1117/12.907768	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146315	-
dc.description.abstract	The electrical resistivity of monolayer graphene exhibit significant changes upon expose to different concentration of oxygen (O-2) at room temperature. The monolayer graphene, grown by chemical vapor deposition (CVD) with perfect uniformity within 1cmx1cm will attach O-2 molecules which will act as a p-type dopant and enhance the hole conductivity, make a change of resistivity of graphene thin film. We quantified the change of resistivity of graphene versus different O-2 concentration and the detection limit of the simple O-2 sensor was 1.25% in volume ratio.	en_US
dc.language.iso	en_US	en_US
dc.title	Oxygen sensors made by monolayer graphene	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.907768	en_US
dc.identifier.journal	QUANTUM SENSING AND NANOPHOTONIC DEVICES IX	en_US
dc.citation.volume	8268	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:000300191700054	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文

文件中的檔案：

93b44d333e47c41feaa715ff1585cf4d.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。