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dc.contributor.authorHuang, S. M.en_US
dc.contributor.authorTokura, Y.en_US
dc.contributor.authorAkimoto, H.en_US
dc.contributor.authorKono, K.en_US
dc.contributor.authorLin, J. J.en_US
dc.contributor.authorTarucha, S.en_US
dc.contributor.authorOno, K.en_US
dc.date.accessioned2018-08-21T05:56:32Z-
dc.date.available2018-08-21T05:56:32Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3666587en_US
dc.identifier.urihttp://hdl.handle.net/11536/146320-
dc.description.abstractWe study the electron resonance tunneling through double quantum dots with different g factors. We found that the resonance tunneling current is suppressed even if one of the Zeeman sublevels is aligned. The level broadening effect partially releases the blockade. The current maximum peak appears when the interdot detune is half of Zeeman energy difference of two quantum dots.en_US
dc.language.isoen_USen_US
dc.subjectquantum doten_US
dc.subjectsingle electron tunnelingen_US
dc.subjectspin transporten_US
dc.titleSpin Bottleneck in Resonance Tunneling through In0.04Ga0.96As/GaAs Vertical Double Quantum Dotsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1063/1.3666587en_US
dc.identifier.journalPHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORSen_US
dc.citation.volume1399en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000301053000348en_US
Appears in Collections:Conferences Paper