Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huang, S. M. | en_US |
dc.contributor.author | Tokura, Y. | en_US |
dc.contributor.author | Akimoto, H. | en_US |
dc.contributor.author | Kono, K. | en_US |
dc.contributor.author | Lin, J. J. | en_US |
dc.contributor.author | Tarucha, S. | en_US |
dc.contributor.author | Ono, K. | en_US |
dc.date.accessioned | 2018-08-21T05:56:32Z | - |
dc.date.available | 2018-08-21T05:56:32Z | - |
dc.date.issued | 2011-01-01 | en_US |
dc.identifier.issn | 0094-243X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3666587 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146320 | - |
dc.description.abstract | We study the electron resonance tunneling through double quantum dots with different g factors. We found that the resonance tunneling current is suppressed even if one of the Zeeman sublevels is aligned. The level broadening effect partially releases the blockade. The current maximum peak appears when the interdot detune is half of Zeeman energy difference of two quantum dots. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | quantum dot | en_US |
dc.subject | single electron tunneling | en_US |
dc.subject | spin transport | en_US |
dc.title | Spin Bottleneck in Resonance Tunneling through In0.04Ga0.96As/GaAs Vertical Double Quantum Dots | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1063/1.3666587 | en_US |
dc.identifier.journal | PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | en_US |
dc.citation.volume | 1399 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000301053000348 | en_US |
Appears in Collections: | Conferences Paper |