Spin Bottleneck in Resonance Tunneling through In0.04Ga0.96As/GaAs Vertical Double Quantum Dots

doi:10.1063/1.3666587

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, S. M.	en_US
dc.contributor.author	Tokura, Y.	en_US
dc.contributor.author	Akimoto, H.	en_US
dc.contributor.author	Kono, K.	en_US
dc.contributor.author	Lin, J. J.	en_US
dc.contributor.author	Tarucha, S.	en_US
dc.contributor.author	Ono, K.	en_US
dc.date.accessioned	2018-08-21T05:56:32Z	-
dc.date.available	2018-08-21T05:56:32Z	-
dc.date.issued	2011-01-01	en_US
dc.identifier.issn	0094-243X	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3666587	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146320	-
dc.description.abstract	We study the electron resonance tunneling through double quantum dots with different g factors. We found that the resonance tunneling current is suppressed even if one of the Zeeman sublevels is aligned. The level broadening effect partially releases the blockade. The current maximum peak appears when the interdot detune is half of Zeeman energy difference of two quantum dots.	en_US
dc.language.iso	en_US	en_US
dc.subject	quantum dot	en_US
dc.subject	single electron tunneling	en_US
dc.subject	spin transport	en_US
dc.title	Spin Bottleneck in Resonance Tunneling through In0.04Ga0.96As/GaAs Vertical Double Quantum Dots	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1063/1.3666587	en_US
dc.identifier.journal	PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS	en_US
dc.citation.volume	1399	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.identifier.wosnumber	WOS:000301053000348	en_US
顯示於類別：	會議論文