統計資料
總造訪次數
| 檢視 | |
|---|---|
| Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer | 1 |
本月總瀏覽
檔案下載
| 檢視 |
|---|
國家瀏覽排行
| 檢視 |
|---|
縣市瀏覽排行
| 檢視 |
|---|
| 檢視 | |
|---|---|
| Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer | 1 |
| 檢視 |
|---|
| 檢視 |
|---|
| 檢視 |
|---|