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dc.contributor.authorHo, ChiaHuaen_US
dc.contributor.authorHuang, Hsin-Hauen_US
dc.contributor.authorLee, Ming-Taouen_US
dc.contributor.authorHsu, Cho-Lunen_US
dc.contributor.authorLai, Tung-Yenen_US
dc.contributor.authorChiu, Wen-Chengen_US
dc.contributor.authorLee, Meiyien_US
dc.contributor.authorChou, Tong-Huanen_US
dc.contributor.authorYang, Ivyen_US
dc.contributor.authorChen, Min-Chengen_US
dc.contributor.authorWu, Cheng-Sanen_US
dc.contributor.authorChiang, Kuang-Haoen_US
dc.contributor.authorYao, Yong-Deren_US
dc.contributor.authorHu, Chenmingen_US
dc.contributor.authorYang, Fu-Liangen_US
dc.date.accessioned2018-08-21T05:56:34Z-
dc.date.available2018-08-21T05:56:34Z-
dc.date.issued2012-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146342-
dc.description.abstractA 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WO x material as the RRAM element is reported. It provides the highest reported current density of >10(8) A/cm(2) and the highest selectivity of >10(5). Stress test at high current density indicates >10(8) cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies is proposed for the observed volatile switching of TVS. Utilizing the threshold characteristics of the TVS selector, a two-step reading waveform offers potential for 3D-stackable and 4F(2) cross-point RRAM applications.en_US
dc.language.isoen_USen_US
dc.titleThreshold Vacuum Switch (TVS) on 3D-Stackable and 4F(2) Cross-Point Bipolar and Unipolar Resistive Random Access Memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000320615600011en_US
顯示於類別：會議論文


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