統計資料
總造訪次數
| 檢視 | |
|---|---|
| Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device | 6 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| Modeling the Variability Caused by Random Grain Boundary and Trap-location Induced Asymmetrical Read Behavior for a Tight-pitch Vertical Gate 3D NAND Flash Memory Using Double-Gate Thin-Film Transistor (TFT) Device | 0 | 0 | 0 | 1 | 1 | 4 | 0 |
檔案下載
| 檢視 |
|---|
國家瀏覽排行
| 檢視 | |
|---|---|
| 美國 | 3 |
| 埃及 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Buffalo | 1 |
| Dallas | 1 |