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dc.contributor.authorHuang, Zhe-Yangen_US
dc.contributor.authorHung, Chung-Chihen_US
dc.date.accessioned2018-08-21T05:56:35Z-
dc.date.available2018-08-21T05:56:35Z-
dc.date.issued2010-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146380-
dc.description.abstractThis paper presents a dual-band low-noise amplifier (DB-LNA) with switching band groups for WiMedia Ultra-Wideband. The LNA is designed and implemented in TSMC 0.18um RF CMOS technology. Measurement results show that the DB-LNA gives 6.1dB and 9.8dB power gain, and that input and output matching are lower than-9.3dB/-9.4dB (Group-1/Group-6) and-9.2dB/-11.7dB (Group-1/Group-6). A minimum noise figure is 5.0dB/5.1dB (Group-1/Group-6) while consuming 24.8mW (including buffer) through 1.8V supply voltage.en_US
dc.language.isoen_USen_US
dc.subjectUltra-widebanden_US
dc.subjectUWBen_US
dc.subjectWiMediaen_US
dc.subjectLow-Noise Amplifieren_US
dc.subjectLNAen_US
dc.titleCMOS Dual-Band Low-Noise Amplifier for World-Wide WiMedia Ultra-Wideband Wireless Personal Area Network Systemen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2010 ASIA-PACIFIC MICROWAVE CONFERENCEen_US
dc.citation.spage334en_US
dc.citation.epage337en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000394046200082en_US
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