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dc.contributor.authorWang, C. M.en_US
dc.contributor.authorHuang, Y. T.en_US
dc.contributor.authorYen, K. H.en_US
dc.contributor.authorHsu, H. J.en_US
dc.contributor.authorHsu, C. H.en_US
dc.contributor.authorZan, H. W.en_US
dc.contributor.authorTsai, C. C.en_US
dc.date.accessioned2018-08-21T05:56:37Z-
dc.date.available2018-08-21T05:56:37Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://dx.doi.org/10.1557/PROC-1245-A04-02en_US
dc.identifier.urihttp://hdl.handle.net/11536/146426-
dc.description.abstractIn this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.en_US
dc.language.isoen_USen_US
dc.titleInfluence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-Film Solar Cell Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1557/PROC-1245-A04-02en_US
dc.identifier.journalAMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010en_US
dc.citation.volume1245en_US
dc.citation.spage85en_US
dc.citation.epage90en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000395264900011en_US
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