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dc.contributor.authorHsu, C. H.en_US
dc.contributor.authorHsu, Y. P.en_US
dc.contributor.authorYao, F. H.en_US
dc.contributor.authorHuang, Y. T.en_US
dc.contributor.authorTsai, C. C.en_US
dc.contributor.authorZan, H. W.en_US
dc.contributor.authorBi, C. C.en_US
dc.contributor.authorLu, C. H.en_US
dc.contributor.authorYeh, C. H.en_US
dc.date.accessioned2018-08-21T05:56:37Z-
dc.date.available2018-08-21T05:56:37Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://dx.doi.org/10.1557/PROC-1245-A21-05en_US
dc.identifier.urihttp://hdl.handle.net/11536/146427-
dc.description.abstractThe crystallinity of the hydrogenated microcrystalline silicon (mu c-Si:H) film was known to influence the solar cell efficiency greatly. Also hydrogen was found to play a critical role in controlling the crystallinity. Instead of employing conventional plasma deposition techniques, this work focused on using catalytic chemical vapor deposition (Cat-CVD) to study the effect of hydrogen dilution and the filament-to-substrate distance on the crystallinity, deposition rate, microstructure factor and electrical property of the mu c-Si: H film. We found that the substrate material and structure can affect the crystallinity of the mu c-Si: H film and the incubation effect. Comparing bare glass, TCO-coated glass, a-Si: H-coated glass and mu c-Si: H-coated glass, the microcrystalline phase grows the fastest onto mu c-Si: H surface, but the slowest onto a-Si: H surface. Surprisingly, the template effect lasted for more than a thousand atomic layers of silicon.en_US
dc.language.isoen_USen_US
dc.titleStudy of Crystallinity in mu c-Si: H Films Deposited by Cat-CVD for Thin Film Solar Cell Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1557/PROC-1245-A21-05en_US
dc.identifier.journalAMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010en_US
dc.citation.volume1245en_US
dc.citation.spage465en_US
dc.citation.epage470en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000395264900064en_US
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