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dc.contributor.authorWu, Chung-Yuen_US
dc.contributor.authorSung, Wei-Jieen_US
dc.contributor.authorKuo, Po-Hanen_US
dc.contributor.authorTzeng, Chi-Kuanen_US
dc.contributor.authorChiao, Chuan-Chinen_US
dc.contributor.authorTsai, Yueh-Chunen_US
dc.date.accessioned2018-08-21T05:56:39Z-
dc.date.available2018-08-21T05:56:39Z-
dc.date.issued2015-01-01en_US
dc.identifier.issn2163-4025en_US
dc.identifier.urihttp://hdl.handle.net/11536/146459-
dc.description.abstractA photovoltaic-cell-powered CMOS 256-pixel implantable chip is proposed for subretinal prostheses. In the proposed chip, the divisional power supply scheme (DPSS) and the active pixel sensor (APS) are adopted to improve the efficiency of output stimulation currents and the image sensitivity. The proposed chip consists of a 16x16 photodiode array with 8 DPSS divisions, control signal generator circuits, and photovoltaic cells. It is designed and fabricated in 180-nm CMOS image sensor (CIS) technology. The chip size is 3mm x 3mm. The measured frequency of eight-phase control signals is 47.68 Hz under signal light intensity of 5 mW/cm(2) and background IR intensity of 80 mW/cm(2). The measured output stimulation current is 19.9 mu A under 10-k Omega load. Under the equivalent electrode impedance load, the measured frequency of eight-phase control signals is 45.45 Hz. The measured peak output stimulation current is 19.52 mu A and the amount of injected charges per pixel is 4.03nC. The measurement results have verified the correct function of the proposed subretinal implant chip.en_US
dc.language.isoen_USen_US
dc.subjectdivisional power supply schemeen_US
dc.subjectactive pixel sensoren_US
dc.subjectphotovolltaic cellen_US
dc.subjectCMOS image sensoren_US
dc.titleThe Design of CMOS Self-Powered 256-Pixel Implantable Chip with On-Chip Photovoltaic Cells and Active Pixel Sensors for Subretinal Prosthesesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS)en_US
dc.citation.spage161en_US
dc.citation.epage164en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000398907900041en_US
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