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dc.contributor.authorLee, Y. -J.en_US
dc.contributor.authorHong, T. -C.en_US
dc.contributor.authorHsueh, F. -K.en_US
dc.contributor.authorSung, P. J.en_US
dc.contributor.authorChen, C. -Y.en_US
dc.contributor.authorChuang, S. -S.en_US
dc.contributor.authorCho, T. -C.en_US
dc.contributor.authorNoda, S.en_US
dc.contributor.authorTsou, Y. -C.en_US
dc.contributor.authorKao, K. -H.en_US
dc.contributor.authorWu, C. -T.en_US
dc.contributor.authorYu, T. -Y.en_US
dc.contributor.authorJian, Y. -L.en_US
dc.contributor.authorSu, C. -J.en_US
dc.contributor.authorHuang, Y. -M.en_US
dc.contributor.authorHuang, W. -H.en_US
dc.contributor.authorChen, B. -Y.en_US
dc.contributor.authorChen, M. -C.en_US
dc.contributor.authorHuang, K. -P.en_US
dc.contributor.authorLi, J. -Y.en_US
dc.contributor.authorChen, M. -J.en_US
dc.contributor.authorLi, Y.en_US
dc.contributor.authorSamukawa, S.en_US
dc.contributor.authorWu, W. -F.en_US
dc.contributor.authorHuang, G. -W.en_US
dc.contributor.authorShieh, J. -M.en_US
dc.contributor.authorTseng, T. -Y.en_US
dc.contributor.authorChao, T. -S.en_US
dc.contributor.authorWang, Y. -H.en_US
dc.contributor.authorYeh, W. -K.en_US
dc.date.accessioned2018-08-21T05:56:39Z-
dc.date.available2018-08-21T05:56:39Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn2380-9248en_US
dc.identifier.urihttp://hdl.handle.net/11536/146473-
dc.description.abstractGe peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) ION and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high I-ON/I-OFF ratio and low subthreshold swing (S.S. similar to 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.en_US
dc.language.isoen_USen_US
dc.titleHigh Performance Complementary Ge Peaking FinFETs by Room Temperature Neutral Beam Oxidation for Sub-7 nm Technology Node Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000399108800210en_US
Appears in Collections:Conferences Paper