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dc.contributor.authorSun, Yingen_US
dc.contributor.authorChien, Shang-Chiehen_US
dc.contributor.authorYip, Hin-Lapen_US
dc.contributor.authorZhang, Yongen_US
dc.contributor.authorChen, Kung-Shihen_US
dc.contributor.authorZeigler, David F.en_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorLin, Baopingen_US
dc.contributor.authorJen, Alex K. -Y.en_US
dc.date.accessioned2014-12-08T15:20:34Z-
dc.date.available2014-12-08T15:20:34Z-
dc.date.issued2011-11-22en_US
dc.identifier.issn0897-4756en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cm2024235en_US
dc.identifier.urihttp://hdl.handle.net/11536/14647-
dc.description.abstractA series of cross-linkable hole-transporting materials (X-HTMs) consisting of indacenodithiophene, bithiophene, and thiophene units bookended by two triarylamine groups have been designed and synthesized to investigate their suitability as new anode buffer layer for bulk heterojunction polymer solar cells (PSCs). These X-HTMs can be thermally cross-linked at temperature between 150 and 180 C to form robust, solvent-resistant films for subsequent spin-coating of another upper layer. Energy levels of these cross-linked materials were measured by cyclic voltammetry, and the data suggest that these X-HTMs have desirable hole-collecting and electron-blocking abilities to function as an anode buffer layer for PSCs. In addition, by incorporating thiophene or fused ring units into the X-HTM backbone, it effectively improved the hole-carrier motilities. To further improve the conductivity and optical transparency for PSCs, the X-HTM films were p-doped with nitrosonium hexafluoroantimonate (NOSbF(6)). The doped X-HTM layers showed remarkably enhanced hole-current densities compared to neutral X-HTM under the same electric field bias. The properties of the doped X-HTM film as anode buffer layer has been investigated in PSCs. The resulting devices showed similar performance compared to those made using conducting polymer, poly(3,4-ethylene- dioxylenethiophene):poly(styrenesulfonate) (PEDOT:PSS), as the anode buffer layer. Moreover, a novel bilayer HTM structure consisting of a doped and a neutral layer was employed to exploit the feasibility of combining high conductivity from the doped X-HTM and good electron-blocking ability from the neutral X-HTM together. Interestingly, PSC devices based on this bilayer structure showed enhanced V(oc), J(sc), and FF compared to the devices with only a single-layer doped X-HTM. These results indicate that such X-HTMs are promising alternative materials to PEDOT:PSS as an anode buffer layer for polymer solar cells.en_US
dc.language.isoen_USen_US
dc.subjecthole-transporting materialsen_US
dc.subjectcross-linkingen_US
dc.subjectPEDOT:PSSen_US
dc.subjectanode buffer layeren_US
dc.subjectdoping polymer solar cellsen_US
dc.titleChemically Doped and Cross-linked Hole-Transporting Materials as an Efficient Anode Buffer Layer for Polymer Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cm2024235en_US
dc.identifier.journalCHEMISTRY OF MATERIALSen_US
dc.citation.volume23en_US
dc.citation.issue22en_US
dc.citation.spage5006en_US
dc.citation.epage5015en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000296893600017-
dc.citation.woscount18-
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