標題: Investigation on Effects of Composition on Transparent Aluminum Zinc Tin Oxide Thin-Film Transistors
作者: Fuh, Chur-Shyang
Teng, Li-Feng
Fan, Yang-Shun
Chang, Chih-Hsiang
Liu, Po-Tsun
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: AZTO;transparent metal oxide semiconductor
公開日期: 1-一月-2012
摘要: We investigated on electrical performance of amorphous Al-Zn-Sn-O thin film transistor (AZTO TFT). The mobility enhanced while the concentration of Sn increased. The improved stability can be attributed to the increase of Sn concentration and enhancement of bonding energy of metal ion with the increase of O-2 gas flow rate.
URI: http://hdl.handle.net/11536/146487
ISSN: 1883-2490
期刊: IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2
Volume: 19
起始頁: 875
結束頁: 877
顯示於類別:會議論文