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Investigation on Effects of Composition on Transparent Aluminum Zinc Tin Oxide Thin-Film Transistors

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dc.citation.epage877en_US
dc.citation.spage875en_US
dc.citation.volume19en_US
dc.contributor.authorFuh, Chur-Shyangen_US
dc.contributor.authorTeng, Li-Fengen_US
dc.contributor.authorFan, Yang-Shunen_US
dc.contributor.authorChang, Chih-Hsiangen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2018-08-21T05:56:40Z
dc.date.available2018-08-21T05:56:40Z
dc.date.issued2012-01-01en_US
dc.description.abstractWe investigated on electrical performance of amorphous Al-Zn-Sn-O thin film transistor (AZTO TFT). The mobility enhanced while the concentration of Sn increased. The improved stability can be attributed to the increase of Sn concentration and enhancement of bonding energy of metal ion with the increase of O-2 gas flow rate.en_US
dc.identifier.issn1883-2490en_US
dc.identifier.journalIDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/146487
dc.identifier.wosnumberWOS:000399355100011en_US
dc.language.isoen_USen_US
dc.subjectAZTOen_US
dc.subjecttransparent metal oxide semiconductoren_US
dc.titleInvestigation on Effects of Composition on Transparent Aluminum Zinc Tin Oxide Thin-Film Transistorsen_US
dc.typeProceedings Paperen_US

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