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dc.contributor.authorHeron, J. T.en_US
dc.contributor.authorTrassin, M.en_US
dc.contributor.authorAshraf, K.en_US
dc.contributor.authorGajek, M.en_US
dc.contributor.authorHe, Q.en_US
dc.contributor.authorYang, S. Y.en_US
dc.contributor.authorNikonov, D. E.en_US
dc.contributor.authorChu, Y-H.en_US
dc.contributor.authorSalahuddin, S.en_US
dc.contributor.authorRamesh, R.en_US
dc.date.accessioned2019-04-03T06:35:47Z-
dc.date.available2019-04-03T06:35:47Z-
dc.date.issued2011-11-14en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.107.217202en_US
dc.identifier.urihttp://hdl.handle.net/11536/14652-
dc.description.abstractA reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.en_US
dc.language.isoen_USen_US
dc.titleElectric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructureen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevLett.107.217202en_US
dc.identifier.journalPHYSICAL REVIEW LETTERSen_US
dc.citation.volume107en_US
dc.citation.issue21en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000297134600022en_US
dc.citation.woscount252en_US
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