Numerical Study on Doping and Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performances

標題:	Numerical Study on Doping and Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performances
作者:	Wu, Po-Ching Hsu, Shun-Chieh Jhen, Yun-Han Dong, Yao-Zhong Ling, Yan-Zhang Hsu, Lung-Hsing Kuo, Hao-Chung Lin, Chien-Chung 光電系統研究所照明與能源光電研究所光電工程學系 Institute of Photonic System Institute of Lighting and Energy Photonics Department of Photonics
關鍵字:	Type-II heterojunction;Quantum rings;solar cells;GaAs;GaSb;Concentrated sunlight operations
公開日期:	1-Jan-2016
摘要:	In this work, we demonstrate the doping concentration and positioning effect of the type-II quantum well (QR) on the solar cell performances in terms of numerical simulation. The variation in doping concentration and location can affect the band diagram seriously and possibly form the back surface field which can either facilitate or deteriorate the carrier collection. A wide range of parameters are calculated to reveal this trend and the previous experimental results are also discussed.
URI:	http://hdl.handle.net/11536/146536
ISSN:	0160-8371
期刊:	2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
起始頁:	2115
結束頁:	2117
Appears in Collections:	Conferences Paper