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dc.contributor.authorHorng, Ray-Huaen_US
dc.contributor.authorWu, Fan-Leien_US
dc.contributor.authorOu, Sin-Liangen_US
dc.contributor.authorKao, Yu-Chengen_US
dc.contributor.authorShih, Shan-Huien_US
dc.date.accessioned2018-08-21T05:56:42Z-
dc.date.available2018-08-21T05:56:42Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/146537-
dc.description.abstractThree buffer layers, that included 2-step, step-graded, and linear-graded layers, were designed to improve the performance of In0.16Ga0.84As solar cell. The In0.16Ga0.84As solar cells fabricated on these three buffer layers were denoted as 2S-cell, S-cell, and L-cell, respectively. The efficiencies of these three devices were 9.8%, 14.4%, and 16.3%, respectively. Obviously, the linear-graded buffer layer is most helpful to enhance the efficiency of In0.16Ga0.84As solar cell. Additionally, the front electrode angle of In0.16Ga0.84As solar cell was varied from 0 degrees to 90 degrees. When the angles were fixed at 0 degrees and 90 degrees, the devices possessed higher efficiencies of 16.3% and 16.6%, respectively.en_US
dc.language.isoen_USen_US
dc.subjectindium gallium arsenideen_US
dc.subjectInGaAs solar cellen_US
dc.subjecttwo stepen_US
dc.subjectstep gradeden_US
dc.subjectlinear gradeden_US
dc.subjectbuffer layeren_US
dc.titleEffects of buffer layers and front electrode angles on the performance of In0.16Ga0.84As solar cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage2341en_US
dc.citation.epage2343en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000399818702083en_US
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