Ge/Al bilayer thin film for optical write-once media

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DC Field	Value	Language
dc.contributor.author	Wu, T. H.	en_US
dc.contributor.author	Kuo, P. C.	en_US
dc.contributor.author	Chen, Jung-Po	en_US
dc.contributor.author	Wu, Chih-Yuan	en_US
dc.contributor.author	Yen, Po-Fu	en_US
dc.contributor.author	Jeng, Tzuan-Ren	en_US
dc.contributor.author	Huang, Der-Ray	en_US
dc.contributor.author	Ou, Sin-Liang	en_US
dc.date.accessioned	2019-04-03T06:47:08Z	-
dc.date.available	2019-04-03T06:47:08Z	-
dc.date.issued	2007-01-01	en_US
dc.identifier.isbn	978-0-8194-6762-1	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://dx.doi.org/10.1117/12.738895	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146555	-
dc.description.abstract	Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275 degrees C. Contrasts at 650 rim and 405 nm wavelength are 71.4% and 31.1% respectively.	en_US
dc.language.iso	en_US	en_US
dc.title	Ge/Al bilayer thin film for optical write-once media	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.738895	en_US
dc.identifier.journal	OPTICAL DATA STORAGE 2007	en_US
dc.citation.volume	6620	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000250199900050	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper

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