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dc.contributor.authorYang, Tsung-Hanen_US
dc.contributor.authorGuo, Zi-Lien_US
dc.contributor.authorFu, Yu-Minen_US
dc.contributor.authorCheng, Yu-Tingen_US
dc.contributor.authorSong, Yen-Fangen_US
dc.contributor.authorWu, Pu-Weien_US
dc.date.accessioned2018-08-21T05:56:45Z-
dc.date.available2018-08-21T05:56:45Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn1084-6999en_US
dc.identifier.urihttp://hdl.handle.net/11536/146590-
dc.description.abstractThe paper presents a low temperature (with 60 degrees C) inkjet printing and filling process to realize low resistive Ag TSV (Through Substrate Vias) with the aspect ratio of via depth vs. diameter from 2 to 5 in a SU-8 substrate potential for flexible microsystem packaging applications. Combining humidity control and layer-by-layer Ag mirror reaction, the proposed process technology can accomplish a fully filled TSV with the lowest electrical resistivity of similar to 450 mu Omega.cm in comparison with the prior printing and filling technologies.en_US
dc.language.isoen_USen_US
dc.titleA LOW TEMPERATURE INKJET PRINTING AND FILLING PROCESS FOR LOW RESISTIVE SILVER TSV FABRICATION IN A SU-8 SUBSTRATEen_US
dc.typeProceedings Paperen_US
dc.identifier.journal30TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2017)en_US
dc.citation.spage749en_US
dc.citation.epage752en_US
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000402552000193en_US
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