完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Yang, Tsung-Han | en_US |
| dc.contributor.author | Guo, Zi-Li | en_US |
| dc.contributor.author | Fu, Yu-Min | en_US |
| dc.contributor.author | Cheng, Yu-Ting | en_US |
| dc.contributor.author | Song, Yen-Fang | en_US |
| dc.contributor.author | Wu, Pu-Wei | en_US |
| dc.date.accessioned | 2018-08-21T05:56:45Z | - |
| dc.date.available | 2018-08-21T05:56:45Z | - |
| dc.date.issued | 2017-01-01 | en_US |
| dc.identifier.issn | 1084-6999 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/146590 | - |
| dc.description.abstract | The paper presents a low temperature (with 60 degrees C) inkjet printing and filling process to realize low resistive Ag TSV (Through Substrate Vias) with the aspect ratio of via depth vs. diameter from 2 to 5 in a SU-8 substrate potential for flexible microsystem packaging applications. Combining humidity control and layer-by-layer Ag mirror reaction, the proposed process technology can accomplish a fully filled TSV with the lowest electrical resistivity of similar to 450 mu Omega.cm in comparison with the prior printing and filling technologies. | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | A LOW TEMPERATURE INKJET PRINTING AND FILLING PROCESS FOR LOW RESISTIVE SILVER TSV FABRICATION IN A SU-8 SUBSTRATE | en_US |
| dc.type | Proceedings Paper | en_US |
| dc.identifier.journal | 30TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS 2017) | en_US |
| dc.citation.spage | 749 | en_US |
| dc.citation.epage | 752 | en_US |
| dc.contributor.department | 加速器光源科技與應用學位學程 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Master and Ph.D. Program for Science and Technology of Accelrrator Light Source | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000402552000193 | en_US |
| 顯示於類別: | 會議論文 | |

