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dc.contributor.authorHuang, Lin-Yien_US
dc.contributor.authorLin, Yu-Tingen_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.date.accessioned2018-08-21T05:56:47Z-
dc.date.available2018-08-21T05:56:47Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/146639-
dc.description.abstractA differential millimeter-wave reflection-type phase shifter is designed at 38 GHz in 90 nm CMOS technology. The measured data shows that the phase shift is tunable up to 161 degrees by voltage control from 0 to 2 V. The insertion loss is compensated by adding a cross-coupled transistor pair, achieving a very low level of 1.45 +/- 0.35 dB over the entire phase tuning range. The circuit consumes dc power of 9.6 mW.en_US
dc.language.isoen_USen_US
dc.subjectRTPSen_US
dc.subjectphase shifteren_US
dc.subjectcross couple pairen_US
dc.subjectCMOS 90nmen_US
dc.titleA 38 GHz Low-Loss Reflection-Type Phase Shifteren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE 17TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF)en_US
dc.citation.spage54en_US
dc.citation.epage56en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000403397700016en_US
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