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dc.contributor.authorYu, Y. T.en_US
dc.contributor.authorTuan, P. H.en_US
dc.contributor.authorChiang, P. Y.en_US
dc.contributor.authorLiang, H. C.en_US
dc.contributor.authorHuang, K. F.en_US
dc.contributor.authorChen, Y. F.en_US
dc.date.accessioned2019-04-03T06:35:46Z-
dc.date.available2019-04-03T06:35:46Z-
dc.date.issued2011-11-03en_US
dc.identifier.issn1539-3755en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevE.84.056201en_US
dc.identifier.urihttp://hdl.handle.net/11536/14664-
dc.description.abstractWe explore the lasing mode selection between the chaotic and scarred modes in stadium-shaped vertical-cavity surface-emitting lasers (VCSELs). Experimental results reveal that the spatial gain distribution in the active layer of a VCSEL can be modified via the aperture size to favor the generation of either the chaotic or the scarred modes. Experimentally obtained chaotic and scarred modes are further employed to perform statistical analysis of wave function intensities for making a comparison with predictions based on the nonlinear sigma model. We verify that the scarring effect can be quantitatively relevant to the weak-localization correction in the intensity probability distribution.en_US
dc.language.isoen_USen_US
dc.titleWave pattern and weak localization of chaotic versus scarred modes in stadium-shaped surface-emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevE.84.056201en_US
dc.identifier.journalPHYSICAL REVIEW Een_US
dc.citation.volume84en_US
dc.citation.issue5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000296960100003en_US
dc.citation.woscount5en_US
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