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dc.contributor.authorLiu, P. T.en_US
dc.contributor.authorChang, C. H.en_US
dc.contributor.authorZheng, G. T.en_US
dc.contributor.authorChang, C. C.en_US
dc.date.accessioned2018-08-21T05:56:50Z-
dc.date.available2018-08-21T05:56:50Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/07510.0163ecsten_US
dc.identifier.urihttp://hdl.handle.net/11536/146714-
dc.description.abstractWe investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm(2)/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.en_US
dc.language.isoen_USen_US
dc.titleInfluence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/07510.0163ecsten_US
dc.identifier.journalTHIN FILM TRANSISTORS 13 (TFT 13)en_US
dc.citation.volume75en_US
dc.citation.spage163en_US
dc.citation.epage168en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000406512700023en_US
Appears in Collections:Conferences Paper


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