Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

doi:10.1149/07510.0163ecst

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, P. T.	en_US
dc.contributor.author	Chang, C. H.	en_US
dc.contributor.author	Zheng, G. T.	en_US
dc.contributor.author	Chang, C. C.	en_US
dc.date.accessioned	2018-08-21T05:56:50Z	-
dc.date.available	2018-08-21T05:56:50Z	-
dc.date.issued	2016-01-01	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/07510.0163ecst	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146714	-
dc.description.abstract	We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm(2)/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.	en_US
dc.language.iso	en_US	en_US
dc.title	Influence of Passivation Layers on Characteristics of High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/07510.0163ecst	en_US
dc.identifier.journal	THIN FILM TRANSISTORS 13 (TFT 13)	en_US
dc.citation.volume	75	en_US
dc.citation.spage	163	en_US
dc.citation.epage	168	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000406512700023	en_US
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