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dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorLiu, Shiu-Jenen_US
dc.contributor.authorHsieh, Tsung-Eongen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorHsieh, Jang-Hsingen_US
dc.date.accessioned2014-12-08T15:20:35Z-
dc.date.available2014-12-08T15:20:35Z-
dc.date.issued2011-11-01en_US
dc.identifier.issn0038-092Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.solener.2011.07.016en_US
dc.identifier.urihttp://hdl.handle.net/11536/14672-
dc.description.abstractAmorphous In-Zn-O (a-IZO) films were deposited on SiO(x) covered n-type Si substrates by using pulsed laser deposition (PLD) technique to form a-IZO/SiO(x)/n-Si heterojunction solar cells. The a-IZO films grown at 150 degrees C with various laser power (250-500 mJ/pulse) exhibit low resistivity (2-3 x 10(-3) Omega cm) and high transparency (similar to 80%) in the visible wavelength range. The highest conversion efficiency of the fabricated a-IZO/SiO(x)/n-Si solar cells is 2.2% under 100 mW/cm(2) illumination (AM 1.5 condition). The open-circuit voltage, short-circuit current density and fill factor of the best device are 0.24 V, 28.4 mA/cm(2) and 33.6%, respectively. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleFabrication and characterization of amorphous In Zn-O/SiO(x)/n-Si heterojunction solar cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.solener.2011.07.016en_US
dc.identifier.journalSOLAR ENERGYen_US
dc.citation.volume85en_US
dc.citation.issue11en_US
dc.citation.spage2589en_US
dc.citation.epage2594en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
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