Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, S. C. | en_US |
dc.contributor.author | Huang, C. K. | en_US |
dc.contributor.author | Chang, E. Y. | en_US |
dc.date.accessioned | 2018-08-21T05:56:51Z | - |
dc.date.available | 2018-08-21T05:56:51Z | - |
dc.date.issued | 2016-01-01 | en_US |
dc.identifier.issn | 1938-5862 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/07205.0019ecst | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146738 | - |
dc.description.abstract | An effective SiON passivation with high density of positive fixed charges for GaN MIS-HEMTs is demonstrated. The positive fixed charges at the SiON/AlGaN interface effectively reduce the surface potential and expand the quantum well below the Fermi level, thus improving the device performance. The GaN MIS-HEMT with SiON demonstrated a high maximum drain-source current density (I-DS,I-max) of > 1 A/mm, a breakdown voltage of 750 V at a drain leakage current of 1 mu A/mm, and a well transfer characteristics. The dynamic ON-resistance only increased slightly under a high quiescent bias of 100 V. | en_US |
dc.language.iso | en_US | en_US |
dc.title | GaN MIS-HEMT with Low Dynamic ON-resistance Using SiON Passivation | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1149/07205.0019ecst | en_US |
dc.identifier.journal | WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 17 | en_US |
dc.citation.volume | 72 | en_US |
dc.citation.spage | 19 | en_US |
dc.citation.epage | 21 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000406801600003 | en_US |
Appears in Collections: | Conferences Paper |