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dc.contributor.authorChao, Rui-Linen_US
dc.contributor.authorWun, Jhih-Minen_US
dc.contributor.authorWang, Yu-Wenen_US
dc.contributor.authorChen, Yi-Hanen_US
dc.contributor.authorBowers, J. E.en_US
dc.contributor.authorShi, Jin-Weien_US
dc.date.accessioned2018-08-21T05:56:51Z-
dc.date.available2018-08-21T05:56:51Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn2374-0140en_US
dc.identifier.urihttp://hdl.handle.net/11536/146741-
dc.description.abstractBy using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 mu m wave length operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7 mu A at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.en_US
dc.language.isoen_USen_US
dc.titleHigh-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE PHOTONICS CONFERENCE (IPC)en_US
dc.citation.spage472en_US
dc.citation.epage473en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000406880100218en_US
Appears in Collections:Conferences Paper


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