High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chao, Rui-Lin	en_US
dc.contributor.author	Wun, Jhih-Min	en_US
dc.contributor.author	Wang, Yu-Wen	en_US
dc.contributor.author	Chen, Yi-Han	en_US
dc.contributor.author	Bowers, J. E.	en_US
dc.contributor.author	Shi, Jin-Wei	en_US
dc.date.accessioned	2018-08-21T05:56:51Z	-
dc.date.available	2018-08-21T05:56:51Z	-
dc.date.issued	2016-01-01	en_US
dc.identifier.issn	2374-0140	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146741	-
dc.description.abstract	By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 mu m wave length operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7 mu A at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.	en_US
dc.language.iso	en_US	en_US
dc.title	High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE PHOTONICS CONFERENCE (IPC)	en_US
dc.citation.spage	472	en_US
dc.citation.epage	473	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000406880100218	en_US
顯示於類別：	會議論文