Large Area MoS2 van der Waals Epitaxy on III-Ns and the Epitaxial Formation of a n-MoS2/p-InGaN Diode

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Jung, Kyooho	en_US
dc.contributor.author	Liu, Che-Yu	en_US
dc.contributor.author	Kim, J. D.	en_US
dc.contributor.author	Choi, Wonsik	en_US
dc.contributor.author	Zhou, Weidong	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Li, Xiuling	en_US
dc.date.accessioned	2018-08-21T05:56:51Z	-
dc.date.available	2018-08-21T05:56:51Z	-
dc.date.issued	2016-01-01	en_US
dc.identifier.issn	2374-0140	en_US
dc.identifier.uri	http://hdl.handle.net/11536/146742	-
dc.description.abstract	Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy. Epitaxial growth of aligned MoS2 triangles on GaN substrates and their evolution into a continuous sheet of >centimeter size are demonstrated. An n-MoS2/p-InGaN diode with clear rectifying behavior is realized by direct van der Waals epitaxy.	en_US
dc.language.iso	en_US	en_US
dc.title	Large Area MoS2 van der Waals Epitaxy on III-Ns and the Epitaxial Formation of a n-MoS2/p-InGaN Diode	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE PHOTONICS CONFERENCE (IPC)	en_US
dc.citation.spage	657	en_US
dc.citation.epage	658	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000406880100301	en_US
顯示於類別：	會議論文