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dc.contributor.authorLee, Hung-Yien_US
dc.contributor.authorYu, Chang-Hungen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.date.accessioned2018-08-21T05:56:52Z-
dc.date.available2018-08-21T05:56:52Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn1930-8868en_US
dc.identifier.urihttp://hdl.handle.net/11536/146757-
dc.description.abstractWe investigate the analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs. The device analog metrics including the transconductance (g(m)), output resistance (R-o) and intrinsic gain (g(m) x R-o) for TMD device are investigated using 3D atomistic TCAD simulations. It is shown that bilayer TMD devices exhibit better analog performance compared with monolayer TMD devices. The impacts of different mobility ratios of bilayer TMD devices to monolayer TMD devices are examined.en_US
dc.language.isoen_USen_US
dc.titleEvaluation of Analog Performance of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) MOSFETsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000408991800023en_US
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