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dc.contributor.authorLai, Chung-Minen_US
dc.contributor.authorChao, Tzu-Yuanen_US
dc.contributor.authorTsou, Wen-Anen_US
dc.contributor.authorChou, Mei-Fenen_US
dc.contributor.authorCheng, Yu-Tingen_US
dc.contributor.authorWen, Kuei-Annen_US
dc.date.accessioned2018-08-21T05:56:54Z-
dc.date.available2018-08-21T05:56:54Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn2325-0305en_US
dc.identifier.urihttp://hdl.handle.net/11536/146799-
dc.description.abstractIn this work, the phase compensation techniques by means of self-biasing control and an additional tuning capacitor for polar modulated tri-band Class-E power amplifier is proposed. The tri-band power amplifier operating at 2.3 similar to 2.7/3.3 similar to 3.8/5.1 similar to 5.8 GHz for WLAN and WiMAX applications adjusts low loss Micro-Electro-Mechanical-Systems (MEMS) switches to select the matching networks. The improvement of phase distortion and system relative constellation error (RCE) is 36.4 degrees and 8.9dB, respectively. Simulation results shows that the maximum power-added efficiency (PAE) of 34.9%, drain efficiency of 37.3%, and output power of 18.8dBm from 2.8V supply can be achieved in 0.18 mu m CMOS Technology.en_US
dc.language.isoen_USen_US
dc.titleA Polar Modulated Tri-band Power Amplifier Using Flexible Substrate Based MEMS Switchesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal40TH EUROPEAN MICROWAVE CONFERENCEen_US
dc.citation.spage998en_US
dc.citation.epage1001en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000411276200254en_US
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