完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lai, Chung-Min | en_US |
dc.contributor.author | Chao, Tzu-Yuan | en_US |
dc.contributor.author | Tsou, Wen-An | en_US |
dc.contributor.author | Chou, Mei-Fen | en_US |
dc.contributor.author | Cheng, Yu-Ting | en_US |
dc.contributor.author | Wen, Kuei-Ann | en_US |
dc.date.accessioned | 2018-08-21T05:56:54Z | - |
dc.date.available | 2018-08-21T05:56:54Z | - |
dc.date.issued | 2010-01-01 | en_US |
dc.identifier.issn | 2325-0305 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/146799 | - |
dc.description.abstract | In this work, the phase compensation techniques by means of self-biasing control and an additional tuning capacitor for polar modulated tri-band Class-E power amplifier is proposed. The tri-band power amplifier operating at 2.3 similar to 2.7/3.3 similar to 3.8/5.1 similar to 5.8 GHz for WLAN and WiMAX applications adjusts low loss Micro-Electro-Mechanical-Systems (MEMS) switches to select the matching networks. The improvement of phase distortion and system relative constellation error (RCE) is 36.4 degrees and 8.9dB, respectively. Simulation results shows that the maximum power-added efficiency (PAE) of 34.9%, drain efficiency of 37.3%, and output power of 18.8dBm from 2.8V supply can be achieved in 0.18 mu m CMOS Technology. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A Polar Modulated Tri-band Power Amplifier Using Flexible Substrate Based MEMS Switches | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 40TH EUROPEAN MICROWAVE CONFERENCE | en_US |
dc.citation.spage | 998 | en_US |
dc.citation.epage | 1001 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000411276200254 | en_US |
顯示於類別: | 會議論文 |