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dc.contributor.authorTsai, Y. S.en_US
dc.contributor.authorWang, S. H.en_US
dc.contributor.authorJuang, F. S.en_US
dc.contributor.authorSu, S. Y.en_US
dc.contributor.authorChang, M. H.en_US
dc.contributor.authorHsieh, T. E.en_US
dc.contributor.authorLiu, M. O.en_US
dc.date.accessioned2018-08-21T05:56:54Z-
dc.date.available2018-08-21T05:56:54Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/146800-
dc.description.abstractIn this study, we dissolved hole transport layer (HTL) material NPB in THF (tetrahydrofuran) solvant, and spin-coated the N,N'-Bis(naphthalene-l-yl)-N,N'-bis(phenyl)-benzidine (NPB) solution on the surface of Indium. Tin Oxide (ITO) anode to enhance the luminance efficiency and lifetime of flexible phosphorescent organic light emitting diodes (POLEDs), where the 2,2',2"-(1,3,5-Benzinetriyl)-tris(I-phenyl-l-H-benzimidazole) (TPBi) was employed as hole blocking layer (HBL) and its thickness was optimized. Such an improvement in the device performance was attributed to the improved hole-electron balance. Finally, we employed 2,9-Dime-thyl-4,7-dphenyl-1,10-phenanhroline (BCP) or TPBi as hole blocking layer. The maximum luminance efficiency reaching 24.4 cd/A can be obtained.en_US
dc.language.isoen_USen_US
dc.subjectorganic light emitting diodeen_US
dc.subjectphosphorescenten_US
dc.subjectspin-coatingen_US
dc.subjectluminance efficiencyen_US
dc.subjectlifetimeen_US
dc.titleEfficiency improvement of flexible phosphorescent organic light emitting diode by inserting a buffer layeren_US
dc.typeProceedings Paperen_US
dc.identifier.journalORGANIC PHOTONIC MATERIALS AND DEVICES Xen_US
dc.citation.volume6891en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000254820100021en_US
Appears in Collections:Conferences Paper