Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing

Abstract

The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8 +/- 0.4 mu m(2) grain size and 7.3 +/- 5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9 +/- 0.4 V, and from LRS to HRS at 1.5 +/- 0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metaloxide-film RRAM fabrication.